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www.irf.com 1 11/16/05 irf6691 hexfet power mosfet plus schottky diode notes through are on page 10 directfet isometric application specific mosfets integrates monolithic trench schottky diode ideal for cpu core dc-dc converters low conduction losses low reverse recovery losses low switching losses low reverse recovery charge and low vf low profile (<0.7 mm) dual sided cooling compatible compatible with existing surface mount techniques description
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;,,& applicable directfet package/layout pad (see p.8,9 for details) sq sx st mq mx mt v dss r ds(on) max qg(typ.) 20v 2.5m ? @v gs = 4.5v 47nc 1.8m ? @v gs = 10v absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation w p d @t c = 25c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient CCC 45 r ja junction-to-ambient 12.5 CCC r ja junction-to-ambient 20 CCC c/w r jc junction-to-case CCC 1.4 r j-pcb junction-to-pcb mounted 1.0 CCC -40 to + 150 2.8 0.022 1.8 89 max. 3226 260 12 20 180 downloaded from: http:///
2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units bv dss drain-to-source breakdown voltage 20 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 12 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 1.8 2.5 m ? CCC 1.2 1.8 v gs(th) gate threshold voltage 1.6 CCC 2.5 v ? v gs(th) / ? t j gate threshold voltage coefficient CCC -4.1 CCC mv/c CCC CCC 1.4 ma i dss drain-to-source leakage current CCC CCC 500 a CCC CCC 5 ma i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 110 CCC CCC s q g total gate charge CCC 47 71 q gs1 pre-vth gate-to-source charge CCC 14 CCC q gs2 post-vth gate-to-source charge CCC 4.4 CCC nc q gd gate-to-drain charge CCC 15 CCC q godr gate charge overdrive CCC 14 CCC see fig. 17 q sw switch charge (q gs2 + q gd ) CCC 19 CCC q oss output charge CCC 30 CCC nc r g gate resistance CCC 0.60 1.5 ? t d(on) turn-on delay time CCC 23 CCC t r rise time CCC 95 CCC ns t d(off) turn-off delay time CCC 25 CCC t f fall time CCC 10 CCC c iss input capacitance CCC 6580 CCC c oss output capacitance CCC 2070 CCC pf c rss reverse transfer capacitance CCC 840 CCC avalanche characteristics parameter units e as si n gl e p u l se a va l anc h e e ner gy mj i ar a va l anc h e c urrent a diode characteristics parameter min. t y p. max. units i s continuous source current CCC CCC 200 (body diode) a i sm pulsed source current CCC CCC 260 (body diode) v sd diode forward voltage CCC CCC 0.65 v t rr reverse recovery time CCC 32 48 ns q rr reverse recovery charge CCC 26 39 nc mosfet symbol clamped inductive load v ds = 10v, i d = 26a conditions ? = 1.0mhz v ds = 10v, v gs = 0v v dd = 16v, v gs = 4.5v v ds = 10v v ds = 16v, v gs = 0v, t j = 125c v gs = 12v v gs = -12v v gs = 4.5v i d = 10ma, reference to 25c v ds = v gs , i d = 250a v ds = 16v, v gs = 0v conditions v gs = 0v, i d = 1.0ma reference to 25c, i d = 10ma v gs = 4.5v, i d = 12a v gs = 10v, i d = 15a v ds = 20v, v gs = 0v t j = 25c, i f = 25a di/dt = 100a/ s t j = 25c, i s = 25a, v gs = 0v showing the integral reverse p-n junction diode. typ. CCC CCC i d = 17a v gs = 0v v ds = 10v i d = 26a 230 26 max. downloaded from: http:///
www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v 60s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60s pulse width tj = 150c vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v 1 2 3 4 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 10v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 32a v gs = 10v downloaded from: http:///
4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1 02 03 04 05 06 0 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v i d = 17a 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec t a = 25c tj = 150c single pulse 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v downloaded from: http:///
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10. threshold voltage vs. temperature fig 9. maximum drain current vs. case temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 0.678 0.00086017.30 0.577560 17.57 8.940000 9.470 106.0000 25 50 75 100 125 150 t c , case temperature (c) 0 25 50 75 100 125 150 175 200 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4 downloaded from: http:///
6 www.irf.com fig 13. maximum avalanche energy vs. drain current fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 12. on-resistance vs. gate voltage 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 12a 15a bottom 26a 2 3 4 5 6 7 8 9 10 v gs, gate -to -source voltage (v) 0 1 2 3 4 5 6 7 8 9 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 32a t j = 25c t j = 125c fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - downloaded from: http:///
www.irf.com 7 d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17. gate charge test circuit fig 16.

for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period 3 <13$==,, + - + + + - - - 3 ?
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# $$ ? !"!!%" fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr downloaded from: http:///
8 www.irf.com directfet outline dimension, mt outline (medium size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs.
max 0.250 0.199 0.156 0.018 0.032 0.036 0.072 0.040 0.026 0.039 0.104 0.028 0.003 0.007 min 6.25 4.80 3.85 0.35 0.78 0.88 1.78 0.98 0.63 0.88 2.46 0.59 0.03 0.08 max 6.35 5.05 3.95 0.45 0.82 0.92 1.82 1.02 0.67 1.01 2.63 0.70 0.08 0.17 min 0.246 0.189 0.152 0.014 0.031 0.035 0.070 0.039 0.025 0.035 0.097 0.023 0.001 0.003 code a b c d e f g h j k l m n p dimensions metric imperial downloaded from: http:///
www.irf.com 9 directfet board footprint, mt outline (medium size can, t-designation).please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. g = gate d = drain s = source g ddd d ss downloaded from: http:///
10 www.irf.com directfet tape & reel dimension (showing component orientation). metric min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 min 12.992 0.7950.504 0.059 3.937 n.c 0.4880.469 max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 imperial standard option (qty 4800) note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6691). for 1000 parts on 7" reel, order IRF6691TR1 metric imperial tr1 option (qty 1000) min 177.77 19.06 13.5 1.5 58.72 n.c 11.911.9 max n.cn.c 12.8 n.c n.c 13.50 12.01 12.01 min 6.90.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.cn.c 0.50 n.cn.c 0.53 n.cn.c reel dimensions downloaded from: http:///
www.irf.com 11 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/05 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.72mh, r g = 25 ? , i as = 26a. pulse width 400s; duty cycle 2%. surface mounted on 1 in. square cu board.
used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. t c measured with thermal couple mounted to top (drain) of part. r is measured at t j of approximately 90c. directfet part marking downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///

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